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Elastic properties of the non-Fermi-liquid metal CeRu4Sb12 and dense Kondo semiconductor CeOs4Sb12

机译:非铁液态金属CeRu4Sb12和致密近藤半导体CeOs4Sb12的弹性

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摘要

We have investigated elastic properties of the Ce-based filled skutterudite antimonides CeRu4Sb12 and CeOs4Sb12 by means of ultrasonic measurements. CeRu4Sb12 shows a slight increase around 130 K in the temperature dependence of the elastic constants C11, (C11−C12)∕2, and C44. No apparent lattice softening toward low temperature expected by a quadrupolar response of the 4f-electronic ground state of the Ce ion was observed at low temperatures. On the other hand, CeOs4Sb12 shows a pronounced lattice softening toward low temperature in the longitudinal C11 as a function of temperature below about 15 K, while a slight lattice softening was observed in the transverse C44 below about 1.5 K, in contrast to no softening in CeRu4Sb12 at low temperatures. Furthermore, CeOs4Sb12 shows a steep drop around a phase-transition temperature of Ts=0.9 K in both C11 and C44. The lattice softening observed in C11 below about 15 K cannot be explained reasonably only by the crystalline electric-field (CEF) effect. Instead, it is most likely to be responsible for a coupling between elastic strain and a relevant renormalized quasiparticle band with a small energy gap in the vicinity of the Fermi level. The elastic properties and the 4f ground state of Ce ions in CeRu4Sb12 and CeOs4Sb12 are discussed in terms of the CEF effect and the band structure in the vicinity of Fermi level.
机译:我们已经通过超声测量研究了Ce基填充方钴矿锑化物CeRu4Sb12和CeOs4Sb12的弹性性能。 CeRu4Sb12在弹性常数C11,(C11-C12)∕ 2和C44的温度依赖性上显示出约130 K的轻微增加。在低温下未观察到Ce离子的4f电子基态的四极响应所预期的朝低温的明显晶格软化。另一方面,CeOs4Sb12在纵向C11中表现出明显的朝向低温的晶格软化,这是温度低于约15 K的函数,而在横向C44中观察到的微晶格软化则是在低于约1.5 K的情况下,与之相比,在C44中没有软化CeRu4Sb12在低温下。此外,CeOs4Sb12在C11和C44中均在Ts = 0.9 K的相变温度附近出现急剧下降。在C11中大约15 K以下观察到的晶格软化不能仅通过结晶电场(CEF)效应来合理地解释。取而代之的是,它最有可能造成弹性应变与相关的重新规范化的准粒子带之间的耦合,而费米能级附近的能隙很小。根据CEF效应和费米能级附近的能带结构,讨论了CeRu4Sb12和CeOs4Sb12中Ce离子的弹性和4f基态。

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